View IRFBE30LPBF_716018.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95507
IRFBE30SPbF IRFBE30LPBF
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free
HEXFET(R) Power MOSFET
D
VDSS = 800V
G S
RDS(on) = 3.0 ID = 4.1A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D2Pak IRFBE30S TO-262 IRFBE30L
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
4.1 2.6 16 125 1.0 20 260 4.1 13 2.0 -55 to + 150
Units
A
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current
W W/C V mJ A mJ V/ns C
c Peak Diode Recovery dv/dt e
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
c
d
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
--- --- ---
Typ.
--- 0.50 ---
Max.
1.0 --- 62
Units
C/W
www.irf.com
1
07/06/04
IRFBE30S/LPbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
800 --- --- 2.0 2.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.90 --- --- --- --- --- --- --- --- --- --- 12 33 82 30 4.5 7.5 1300 310 190 --- --- 3.0 4.0 --- 100 500 100 -100 78 9.6 45 --- --- --- --- --- --- --- --- ---
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 2.5A V VDS = VGS, ID = 250A S VDS = 100V, ID = 2.5A A VDS = 800V, VGS = 0V VDS = 640V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = 400V VGS = 10V, See Fig. 6 & 13 VDD = 400V ns ID = 4.1A RG = 12 RD = 95, See Fig. 10 D nH Between lead,
f
f
f
6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
G
S
pF
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 480 1.8 4.1 A 16 1.8 720 2.7 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
p-n junction diode. TJ = 25C, IS = 4.1A, VGS = 0V TJ = 25C, IF = 4.1A di/dt = 100A/s
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). VDD=50V, starting TJ = 25C, L=29mH, RG=25,
ISD 4.1A, di/dt 100A/s, VDD 600, Pulse width 300s; duty cycle 2%.
TJ 150C.
I AS = 4.1A. (See Figure 12).
2
www.irf.com
IRFBE30S/LPbF
www.irf.com
3
IRFBE30S/LPbF
4
www.irf.com
IRFBE30S/LPbF
www.irf.com
5
IRFBE30S/LPbF
6
www.irf.com
IRFBE30S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+ +
-
* dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -
* Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D= P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig-14 For N -Channel HEXFETS
www.irf.com
7
IRFBE30S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE "L" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E RNAT IONAL RE CT IF IER LOGO AS SE MBLY LOT CODE PART NUMB ER F 530S DAT E CODE YE AR 0 = 2000 WE EK 02 LINE L
OR
INTE RNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DATE CODE P = DES IGNATE S LEAD-FRE E PRODUCT (OPTIONAL) YE AR 0 = 2000 WE EK 02 A = AS S EMBLY S IT E CODE
8
www.irf.com
IRFBE30S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBL ED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in as sembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY L OT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
OR
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S IT E CODE
www.irf.com
9
IRFBE30S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04
10
www.irf.com

▲Up To Search▲

Price & Availability of IRFBE30LPBF

	To Download IRFBE30LPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .